Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 113
... shows the complex permittivity of the fluoromethylene cyanate ester where n = 6 at K , and K , bands . The value of ca. 2.30 is very low for a cyanate ester resin . Both of these materials show great potential as new low dielectric ...
... shows the complex permittivity of the fluoromethylene cyanate ester where n = 6 at K , and K , bands . The value of ca. 2.30 is very low for a cyanate ester resin . Both of these materials show great potential as new low dielectric ...
Page 142
... shows the ∞ of a 24.2 μm thick PMDA - ODA polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in this temperature range . The CTE of PMDA ...
... shows the ∞ of a 24.2 μm thick PMDA - ODA polyimide film between 20 ° C to 400 ° C . Since the glass transition temperature is above 400 ° C , the curve does not show a large slope change in this temperature range . The CTE of PMDA ...
Page 242
... show SEM cross - sectional views of the 0.8 μm thick RTCVD - SiOF , 0.8 μm thick LPD - SiO2 and FAST- SOG films formed ... shows low RTCVD - SIOF LPD - SiO2 FAST - SOG TEOS / 03 On Wirings On Field ( a ) ( b ) ( c ) W PECVD - SIO2 X ( d ) ...
... show SEM cross - sectional views of the 0.8 μm thick RTCVD - SiOF , 0.8 μm thick LPD - SiO2 and FAST- SOG films formed ... shows low RTCVD - SIOF LPD - SiO2 FAST - SOG TEOS / 03 On Wirings On Field ( a ) ( b ) ( c ) W PECVD - SIO2 X ( d ) ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch