Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 262
In addition to their low dielectric constant , silica xerogels / aerogels offer several other important advantages for microelectronics including : 1 ) thermal stability to 900 ° C , 2 ) small pore size ( << microelectronics features ) ...
In addition to their low dielectric constant , silica xerogels / aerogels offer several other important advantages for microelectronics including : 1 ) thermal stability to 900 ° C , 2 ) small pore size ( << microelectronics features ) ...
Page 268
Properties of silica aerogels will be compared with those of other porous dielectric materials . INTRINSIC DIELECTRIC PROPERTIES OF SILICA AEROGELS Silica aerogels have intrinsically low dielectric permittivity for the following reasons ...
Properties of silica aerogels will be compared with those of other porous dielectric materials . INTRINSIC DIELECTRIC PROPERTIES OF SILICA AEROGELS Silica aerogels have intrinsically low dielectric permittivity for the following reasons ...
Page 269
For silica , this relation is k ' - 1 = 1.42p ; our data for dried silica aerogel , measured at microwave frequencies [ 2 ] gives K ' - 1-1.48p , in good agreement with this relation . It can also be shown [ 1 ] that for gas molecules ...
For silica , this relation is k ' - 1 = 1.42p ; our data for dried silica aerogel , measured at microwave frequencies [ 2 ] gives K ' - 1-1.48p , in good agreement with this relation . It can also be shown [ 1 ] that for gas molecules ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |