Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
From inside the book
Results 1-3 of 62
Page 117
As compared to silicon dioxide , organic dielectrics with K < 3 . 84 reduce power
dissipation , crosstalk and RC delays in interconnects . Curing is essential after
deposition of these materials to initiate polymerization reactions and formi films of
...
As compared to silicon dioxide , organic dielectrics with K < 3 . 84 reduce power
dissipation , crosstalk and RC delays in interconnects . Curing is essential after
deposition of these materials to initiate polymerization reactions and formi films of
...
Page 147
GLASS TRANSITION TEMPERATURE OF ULTRATHIN POLYMER FILMS ON
SILICON WEN - LI WU , WILLIAM E . WALLACE AND JOHN VAN ZANTEN
Polymers Division , NIST , Gaithersburg , MD 20899 ABSTRACT The glass
transition ...
GLASS TRANSITION TEMPERATURE OF ULTRATHIN POLYMER FILMS ON
SILICON WEN - LI WU , WILLIAM E . WALLACE AND JOHN VAN ZANTEN
Polymers Division , NIST , Gaithersburg , MD 20899 ABSTRACT The glass
transition ...
Page 166
Metal surfaces in UV light , in general , exclude reflective light and appear much
darker than the resin . This allows defects to be easily seen in UV light on DVS -
bisBCB films on silicon wafers and in multichip modules ( MCM ) . The structure ...
Metal surfaces in UV light , in general , exclude reflective light and appear much
darker than the resin . This allows defects to be easily seen in UV light on DVS -
bisBCB films on silicon wafers and in multichip modules ( MCM ) . The structure ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers