Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 55
... silicon wafers or aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this ...
... silicon wafers or aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this ...
Page 106
... silicon wafers by exposing to NF3 plasma in a microwave downstream plasma system . We measured the er and thermal stability of the fluorinated polymers . In addition , we analyzed molecular structures of the films . Finally , we ...
... silicon wafers by exposing to NF3 plasma in a microwave downstream plasma system . We measured the er and thermal stability of the fluorinated polymers . In addition , we analyzed molecular structures of the films . Finally , we ...
Page 147
... SILICON WEN - LI WU , WILLIAM E. WALLACE AND JOHN VAN ZANTEN Polymers Division , NIST , Gaithersburg , MD 20899 ABSTRACT The glass transition temperature , T. , of polystyrene ( PS ) thin films on silicon wafers with different surface ...
... SILICON WEN - LI WU , WILLIAM E. WALLACE AND JOHN VAN ZANTEN Polymers Division , NIST , Gaithersburg , MD 20899 ABSTRACT The glass transition temperature , T. , of polystyrene ( PS ) thin films on silicon wafers with different surface ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch