Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 12
... siloxane Fluoro - polyimide Ultradel 1608D ( PMDA - APBP ) Amoco Probimide 600 ( meta - PAE ) PSI - N - 6002 ( BTDA - ODA based siloxane ) OCG Amoco / Chisso FPI - 45 ( PMDA / BPDA / TFMOB ) Du Pont Ultradel 4212 ( HFDA - APBP ) Amoco ...
... siloxane Fluoro - polyimide Ultradel 1608D ( PMDA - APBP ) Amoco Probimide 600 ( meta - PAE ) PSI - N - 6002 ( BTDA - ODA based siloxane ) OCG Amoco / Chisso FPI - 45 ( PMDA / BPDA / TFMOB ) Du Pont Ultradel 4212 ( HFDA - APBP ) Amoco ...
Page 255
... siloxane spin - on - glass ( SOG ) is a conventional gap - filling material . In accordance with the requirement of low permittivity , many of major SOG suppliers are developing new types of methyl siloxane SOGS . The most interesting ...
... siloxane spin - on - glass ( SOG ) is a conventional gap - filling material . In accordance with the requirement of low permittivity , many of major SOG suppliers are developing new types of methyl siloxane SOGS . The most interesting ...
Page 256
... Siloxane SOGs and Their Cure Conditions All of the studied methyl siloxane SOGS were formed by spin - coating the precursors on silicon wafers and curing them in a furnace . We show here the major solvents in the precursors and the cure ...
... Siloxane SOGs and Their Cure Conditions All of the studied methyl siloxane SOGS were formed by spin - coating the precursors on silicon wafers and curing them in a furnace . We show here the major solvents in the precursors and the cure ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch