Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 16
Page 98
... similar to that employed with PPQ , the wet films being dried for one hour each at 80 , 150 and 350 ̊C in nitrogen . Discussion 3.5 ( 5 ) PERMITTIVITY ( € ) 3.0 ( 7 ) ( 6 ) 2.5 100 200 TEMPERATURE ( ° C ) 300 400 Figure 3. Variation of ...
... similar to that employed with PPQ , the wet films being dried for one hour each at 80 , 150 and 350 ̊C in nitrogen . Discussion 3.5 ( 5 ) PERMITTIVITY ( € ) 3.0 ( 7 ) ( 6 ) 2.5 100 200 TEMPERATURE ( ° C ) 300 400 Figure 3. Variation of ...
Page 265
... similar Porod slopes of -3.1 +/- 0.1 indicating similar small - scale structure . The bend region can be analyzed to yield the diameter of gyration which is indicative of a characteristic feature size . These results are presented in ...
... similar Porod slopes of -3.1 +/- 0.1 indicating similar small - scale structure . The bend region can be analyzed to yield the diameter of gyration which is indicative of a characteristic feature size . These results are presented in ...
Page 276
... similar to that of DLC – would show dielectric constants similar to that of DLC ( about 4.0 , see Table I ) . In contrast to the role of hydrogen in ( PE ) CVD deposition of DLC , a H2 gas ambient used with the PLD of carbon produces ...
... similar to that of DLC – would show dielectric constants similar to that of DLC ( about 4.0 , see Table I ) . In contrast to the role of hydrogen in ( PE ) CVD deposition of DLC , a H2 gas ambient used with the PLD of carbon produces ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch