Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 62
After filtration , the solutions can be easily spincoated onto wafers of different substrate materials and physical ... A typical thickness of 10,000 Å at a spin rate of 3,000 rpm is routinely obtained from a cyclopentanone solution of ...
After filtration , the solutions can be easily spincoated onto wafers of different substrate materials and physical ... A typical thickness of 10,000 Å at a spin rate of 3,000 rpm is routinely obtained from a cyclopentanone solution of ...
Page 82
The resulting viscous polymer solution was cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer .
The resulting viscous polymer solution was cooled to room temperature and precipitated into 800 mL of hexane , washed 2X in water / methanol , filtered and vacuum dried to constant weight to yield 4.8 g of polymer .
Page 95
The residual water and some xylene were evaporated at 30 ° C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding the ...
The residual water and some xylene were evaporated at 30 ° C under a partial pressure of 20 mm Hg for 7 hours , leading to a water - free solution of PPQ 4 having a viscosity of 5 Pa s , which was reduced to 1.5 Pa s by adding the ...
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |