Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 62
After filtration , the solutions can be easily spincoated onto wafers of different
substrate materials and physical dimensions ... A typical thickness of 10 , 000 Å at
a spin rate of 3 , 000 rpm is routinely obtained from a cyclopentanone solution of
...
After filtration , the solutions can be easily spincoated onto wafers of different
substrate materials and physical dimensions ... A typical thickness of 10 , 000 Å at
a spin rate of 3 , 000 rpm is routinely obtained from a cyclopentanone solution of
...
Page 72
When the product solution was cooled in a refrigerator overnight , the para -
isomer , namely 2 , 5 - ( diisopropoxycarbonyl ) terephthalic acid crystallized . The
para - isomer crystals were isolated by filtration and washed with n - hexane .
When the product solution was cooled in a refrigerator overnight , the para -
isomer , namely 2 , 5 - ( diisopropoxycarbonyl ) terephthalic acid crystallized . The
para - isomer crystals were isolated by filtration and washed with n - hexane .
Page 82
5 days under an argon atmosphere until the mixture became a clear , yellow
homogeneous solution . At this point , 1 . 11 g of pyridine and 1 . 46 g of acetic
anhydride were added and the mixture was heated to 80°C for 12h to effect
chemical ...
5 days under an argon atmosphere until the mixture became a clear , yellow
homogeneous solution . At this point , 1 . 11 g of pyridine and 1 . 46 g of acetic
anhydride were added and the mixture was heated to 80°C for 12h to effect
chemical ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Export Citation | BiBTeX EndNote RefMan |