Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 62
... solution of FLARE TM having a solids content of 7.7 % and a Brookfield viscosity of 150 cP at 25 ° C . Polymer Solution Stability Nominally 5-10 % ( wt / wt ) FLARE TM polymer solutions exhibit excellent shelf life at room temperature ...
... solution of FLARE TM having a solids content of 7.7 % and a Brookfield viscosity of 150 cP at 25 ° C . Polymer Solution Stability Nominally 5-10 % ( wt / wt ) FLARE TM polymer solutions exhibit excellent shelf life at room temperature ...
Page 82
... solution . The flask was cooled to 5 ° C and a solution of 2.403 g ( 6.92 mmol ) of para - diethyl pyromellitate diacyl chloride in 15 mL of THF was added dropwise . The solution was allowed to warm to room temperature and stir for 24 h ...
... solution . The flask was cooled to 5 ° C and a solution of 2.403 g ( 6.92 mmol ) of para - diethyl pyromellitate diacyl chloride in 15 mL of THF was added dropwise . The solution was allowed to warm to room temperature and stir for 24 h ...
Page 95
... solution of PPQ 4 ( inh 0.9 dl g1 , solution viscosity = 1.68 Pa s ) at 12.35 wt . % solids in a 65:35 mixture of meta - cresol and xylene , filtered through a 0.2 μm teflon membrane , was used to prepare the film samples . They were ...
... solution of PPQ 4 ( inh 0.9 dl g1 , solution viscosity = 1.68 Pa s ) at 12.35 wt . % solids in a 65:35 mixture of meta - cresol and xylene , filtered through a 0.2 μm teflon membrane , was used to prepare the film samples . They were ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch