Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 63
... Solvent Resistance 10000 9000 8000 7000 6000 5000 4000 3000 2000 25 45 65 85 105 125 145 165 VISCOSITY ( CP ) Figure 2. Viscosity and Film Thickness Polymer dielectric coatings must , after cure , exhibit extremely good resistance to ...
... Solvent Resistance 10000 9000 8000 7000 6000 5000 4000 3000 2000 25 45 65 85 105 125 145 165 VISCOSITY ( CP ) Figure 2. Viscosity and Film Thickness Polymer dielectric coatings must , after cure , exhibit extremely good resistance to ...
Page 82
... solvent ( e.g. NMP ) at concentrations of 10 - 30 % solids . Thin films could be formed by spinning ( 1-10 μm ) or doctor blading ( 10-40 μm ) onto an appropriate substrate . The films are then heated incrementally to > 300 ° C in an ...
... solvent ( e.g. NMP ) at concentrations of 10 - 30 % solids . Thin films could be formed by spinning ( 1-10 μm ) or doctor blading ( 10-40 μm ) onto an appropriate substrate . The films are then heated incrementally to > 300 ° C in an ...
Page 97
... solvents . In particular the polyimides prepared from 4,4 ' - ( 9H - fluoren - 9 - ylidene ) bisbenzeneamine ( DAPF ) were described to be soluble in many polar organic solvents although they had a glass transition temperature in the ...
... solvents . In particular the polyimides prepared from 4,4 ' - ( 9H - fluoren - 9 - ylidene ) bisbenzeneamine ( DAPF ) were described to be soluble in many polar organic solvents although they had a glass transition temperature in the ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch