Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 124
... spectra of Parylene N were collected during a temperature ramp . The spectra shown in Figure 3 indicate that the decomposed material from the film is p - xylene ( CH3C6H4CH3 ) . The actual temperature is around 390 ° C . At higher ...
... spectra of Parylene N were collected during a temperature ramp . The spectra shown in Figure 3 indicate that the decomposed material from the film is p - xylene ( CH3C6H4CH3 ) . The actual temperature is around 390 ° C . At higher ...
Page 256
... spectra of the SOGS after cure are shown in Fig.1 . Note that significant silanol ( OH groups ) was not detected in any cured SOGs . OH groups are suspected to contribute much to the permittivity . The spectra are similar among SOG ( b ) ...
... spectra of the SOGS after cure are shown in Fig.1 . Note that significant silanol ( OH groups ) was not detected in any cured SOGs . OH groups are suspected to contribute much to the permittivity . The spectra are similar among SOG ( b ) ...
Page 280
... spectra of SOG films with various treatment times at 400 ° C . 200 400 600 800 1000 BINDING ENERGY ( eV ) Fig . 2 XPS spectra of furnace cured and Ar plasma treatment SOG films . The absorption spectrum for the film cured in a furnace ...
... spectra of SOG films with various treatment times at 400 ° C . 200 400 600 800 1000 BINDING ENERGY ( eV ) Fig . 2 XPS spectra of furnace cured and Ar plasma treatment SOG films . The absorption spectrum for the film cured in a furnace ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch