Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 66
... Stability High thermal stability in organic polymer dielectrics is a crucial and primary requirement . We have evaluated the thermal stability of a FLARE TM derivative in both free - standing thin film form and as a coating on silicon ...
... Stability High thermal stability in organic polymer dielectrics is a crucial and primary requirement . We have evaluated the thermal stability of a FLARE TM derivative in both free - standing thin film form and as a coating on silicon ...
Page 71
... stability at all interfaces . The high degree of interfacial stability requires low ( or zero ) interfacial stress and high adhesion strength : that is , lower interfacial stress and stronger interfacial adhesion give higher interfacial ...
... stability at all interfaces . The high degree of interfacial stability requires low ( or zero ) interfacial stress and high adhesion strength : that is , lower interfacial stress and stronger interfacial adhesion give higher interfacial ...
Page 124
... STABILITY STUDY OF PARYLENE N Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H4CH2 . Thermal analysis of Parylene was made on TGA , FTIR and a Mass ...
... STABILITY STUDY OF PARYLENE N Parylene N is a vapor deposited polymer with excellent conformality ' . The chemical composition of the Parylene N monomer is CH2C6H4CH2 . Thermal analysis of Parylene was made on TGA , FTIR and a Mass ...
Contents
Methods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured decrease density device dielectric film dielectric properties electrode electromigration FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology TEOS/O test structure thermal stability thin films ULSI vapor deposition wet etch