Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 198
... successfully integrate the low-dielectric-constant materials into standard on-
chip interconnect structures, the new materials must meet stringent process and
reliability requirements such as: (1) high mechanical strength, (2) good
dimensional ...
... successfully integrate the low-dielectric-constant materials into standard on-
chip interconnect structures, the new materials must meet stringent process and
reliability requirements such as: (1) high mechanical strength, (2) good
dimensional ...
Page 198
Since pure polymers have a lower mechanical strength than SiO2 , polymers do
not suppress hillock formation in interconnects as effectively as SiO2 , resulting in
a shorter electromigration lifetime of Al alloys [ 4 ] . Delamination due to poor ...
Since pure polymers have a lower mechanical strength than SiO2 , polymers do
not suppress hillock formation in interconnects as effectively as SiO2 , resulting in
a shorter electromigration lifetime of Al alloys [ 4 ] . Delamination due to poor ...
Page 271
Volume Resistivity and Dielectric Strength The dielectric conductivity ( o ) of
aerogels is obtained from our microwave measurements by using the relation ( 1
) , o = 5 . 5x10 - 13K ' tand f ( ohm - cm ) - 1 , where k ' and tand are the dielectric ...
Volume Resistivity and Dielectric Strength The dielectric conductivity ( o ) of
aerogels is obtained from our microwave measurements by using the relation ( 1
) , o = 5 . 5x10 - 13K ' tand f ( ohm - cm ) - 1 , where k ' and tand are the dielectric ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers