Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 51
Page 131
... stress increases linearly with thermal expansion coefficient , with the slope depending strongly on the modulus . For the elastic- plastic cases , the stress increases only to the yield strength ( 100 MPa ) and does not depend strongly ...
... stress increases linearly with thermal expansion coefficient , with the slope depending strongly on the modulus . For the elastic- plastic cases , the stress increases only to the yield strength ( 100 MPa ) and does not depend strongly ...
Page 142
... stress intensity , interface adhesion energy , etc. of the device . This information is also essential for making the finite element stress calcu- lation . Figure 3 show the in - plane stress vs. elongation curve of a 7.7 μm thick free ...
... stress intensity , interface adhesion energy , etc. of the device . This information is also essential for making the finite element stress calcu- lation . Figure 3 show the in - plane stress vs. elongation curve of a 7.7 μm thick free ...
Page 207
... stress will change and the stress changes from low compressive to low tensile . Figure 2 shows the stress due to thermal cycling . For comparison a polyimide stress - temperature curve is shown Figure 3. Details of the experiment can be ...
... stress will change and the stress changes from low compressive to low tensile . Figure 2 shows the stress due to thermal cycling . For comparison a polyimide stress - temperature curve is shown Figure 3. Details of the experiment can be ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch