Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 131
The entire structure is assumed to be stress - free at 400 ° C ( a typical dielectric deposition temperature ) and cooled to room temperature . The resulting thermal stresses are calculated . The average in - plane stress in the ...
The entire structure is assumed to be stress - free at 400 ° C ( a typical dielectric deposition temperature ) and cooled to room temperature . The resulting thermal stresses are calculated . The average in - plane stress in the ...
Page 142
Those properties play very important roles in terms of determining the structural integrity , stress intensity , interface adhesion energy , etc. of the device . This information is also essential for making the finite element stress ...
Those properties play very important roles in terms of determining the structural integrity , stress intensity , interface adhesion energy , etc. of the device . This information is also essential for making the finite element stress ...
Page 207
When annealed , the film stress will change and the stress changes from low compressive to low tensile . Figure 2 shows the stress due to thermal cycling . For comparison a polyimide stress - temperature curve is shown Figure 3.
When annealed , the film stress will change and the stress changes from low compressive to low tensile . Figure 2 shows the stress due to thermal cycling . For comparison a polyimide stress - temperature curve is shown Figure 3.
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |