Low-dielectric Constant Materials |
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Page 131
The entire structure is assumed to be stress-free at 400 °C (a typical dielectric
deposition temperature) and cooled to room temperature. The resulting thermal
stresses are calculated. The average in-plane stress in the dielectric as a function
of ...
The entire structure is assumed to be stress-free at 400 °C (a typical dielectric
deposition temperature) and cooled to room temperature. The resulting thermal
stresses are calculated. The average in-plane stress in the dielectric as a function
of ...
Page 142
Those properties play very important roles in terms of determining the structural
integrity, stress intensity, interface adhesion energy, etc. of the device. This
information is also essential for making the finite element stress calculation.
Figure 3 ...
Those properties play very important roles in terms of determining the structural
integrity, stress intensity, interface adhesion energy, etc. of the device. This
information is also essential for making the finite element stress calculation.
Figure 3 ...
Page 257
They are irrelevant to the interpretation of the film properties. Silanol (Si-OH)
peaks, which should be observed around 930 cm"1 and 3300 cm"1 if any, are not
observed in any SOGs. We derived the film stress by measuring the wafer
curvature ...
They are irrelevant to the interpretation of the film properties. Silanol (Si-OH)
peaks, which should be observed around 930 cm"1 and 3300 cm"1 if any, are not
observed in any SOGs. We derived the film stress by measuring the wafer
curvature ...
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Contents
Methods and Needs for Low K Material Research | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
23 other sections not shown
Other editions - View all
Low-Dielectric Constant Materials II: H. Treichel,A. C. Jones,A. Lagendijk,K. Uram Snippet view - 1997 |
Common terms and phrases
1995 Materials Research a-tC alternating copolyimide anisotropy annealing applications bond BPDA-PDA bulk c-BN capacitance chemical chemical vapor deposition coating copolymers copper cured decrease density device dianhydride dielectric film dielectric materials dielectric properties electromigration electronic film thickness films deposited fluorinated polyimide foamed frequency FTIR glass transition temperature h-BN helicon reactor imide in-plane increase insulating integrated circuits interlayer dielectric ISBN labile block layer low dielectric constant lower Materials Research Society measured mechanical properties metal microelectronics micron microwave modulus monomers Multilevel Interconnection organic polymers oxide Parylene patterns permittivity photoresist planarization plasma plasma treatment polish rate polyimide film polymerization pore precursor Proc refractive index Rensselaer Polytechnic Institute RTCVD-SiOF sample shown in Figure silica aerogels silicon wafers siloxane SiO2 SiO2 films slurry SOG film solvent spin-coated spin-on stress substrate surface Table technique Technology test structure thermal stability thin films ULSI vapor deposition VLSI
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Author | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| Export Citation | BiBTeX EndNote RefMan |