Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 131
The entire structure is assumed to be stress - free at 400°C ( a typical dielectric
deposition temperature ) and cooled to room temperature . The resulting thermal
stresses are calculated . The average in - plane stress in the dielectric as a ...
The entire structure is assumed to be stress - free at 400°C ( a typical dielectric
deposition temperature ) and cooled to room temperature . The resulting thermal
stresses are calculated . The average in - plane stress in the dielectric as a ...
Page 142
Those properties play very important roles in terms of determining the structural
integrity, stress intensity, interface adhesion energy, etc. of the device. This
information is also essential for making the finite element stress calculation.
Figure 3 ...
Those properties play very important roles in terms of determining the structural
integrity, stress intensity, interface adhesion energy, etc. of the device. This
information is also essential for making the finite element stress calculation.
Figure 3 ...
Page 142
Those properties play very important roles in terms of determining the structural
integrity , stress intensity , interface adhesion energy , etc . of the device . This
information is also essential for making the finite element stress calculation .
Those properties play very important roles in terms of determining the structural
integrity , stress intensity , interface adhesion energy , etc . of the device . This
information is also essential for making the finite element stress calculation .
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers