Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. |
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Page 10
Many different processing issues such as film adhesion , compatibility to various chemicals , etching of via holes , photoresist stripping , etc. , must be carefully studied . In addition , the effect of moisture content and material ...
Many different processing issues such as film adhesion , compatibility to various chemicals , etching of via holes , photoresist stripping , etc. , must be carefully studied . In addition , the effect of moisture content and material ...
Page 84
The structures of some of the polyimides studied are shown in Figure 2. PMDA / 3FDA has a very high Tę ( ~ 430 ° C ) and is soluble in its ... We were also interested in studying the semicrystalline ordered polyimide , PMDA / 4 - BDAF .
The structures of some of the polyimides studied are shown in Figure 2. PMDA / 3FDA has a very high Tę ( ~ 430 ° C ) and is soluble in its ... We were also interested in studying the semicrystalline ordered polyimide , PMDA / 4 - BDAF .
Page 141
These properties are also essential for mechanical stress and thermal stress modeling studies . Biphenyldianhydride - Phenylenediamine ... Their thermal expansion coefficients and mechanical properties were studied and reported here .
These properties are also essential for mechanical stress and thermal stress modeling studies . Biphenyldianhydride - Phenylenediamine ... Their thermal expansion coefficients and mechanical properties were studied and reported here .
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Contents
VaMethods | 3 |
Fluorinated Low Thermal Expansion Coefficient Polyimides | 19 |
Investigations of the Low Dielectric Constant Fluorinated | 31 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce requirements Research resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal stability thickness thin films values vapor various Volume wafer
Bibliographic information
| Title | Low-Dielectric Constant Materials-Synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A. Materials Research Society symposia proceedings, ISSN 0272-9172 Volume 381 of Materials Research Society: Materials Research Society symposia proceedings |
| Editor | Toh-Ming Lu |
| Publisher | Materials Research Society, 1995 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558992847, 9781558992849 |
| Length | 288 pages |
| Subjects | › › Technology & Engineering / Electronics / General |
| Export Citation | BiBTeX EndNote RefMan |