Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Results 1-3 of 52
Page 147
... substrate was no greater than a few segment lengths . As an initial attempt to probe the influence of the interaction between the polymer and the substrate on local chain dynamics , the T of ultrathin films of PS on two different ...
... substrate was no greater than a few segment lengths . As an initial attempt to probe the influence of the interaction between the polymer and the substrate on local chain dynamics , the T of ultrathin films of PS on two different ...
Page 251
... substrate on the powered electrode , the films peeled off from the substrate because of low adhesive force between the films and the Si substrate . However , we found that this peeling was suppressed by inserting a thin a - C : H ...
... substrate on the powered electrode , the films peeled off from the substrate because of low adhesive force between the films and the Si substrate . However , we found that this peeling was suppressed by inserting a thin a - C : H ...
Page 257
... substrate , b is the thickness of the substrate , v is the Poisson ratio of the substrate , d is the film thickness and R is the wafer curvature . The results are shown in Table III . All of the SOGS were shown to have small stress ...
... substrate , b is the thickness of the substrate , v is the Poisson ratio of the substrate , d is the film thickness and R is the wafer curvature . The results are shown in Table III . All of the SOGS were shown to have small stress ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch