Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 149
... surface is somewhat greater than that of PS and silicon oxide . Measurement of Wad between PS and these two surfaces is now in progress . Thickness ( Ångstroms ) 98 97 96 95 2 2 2 2 2 2 94 93 92 36 91 91Å 530 20 520 510 500 497Å EE ...
... surface is somewhat greater than that of PS and silicon oxide . Measurement of Wad between PS and these two surfaces is now in progress . Thickness ( Ångstroms ) 98 97 96 95 2 2 2 2 2 2 94 93 92 36 91 91Å 530 20 520 510 500 497Å EE ...
Page 183
... surface followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive ...
... surface followed by removal of the abraded material from the vicinity of the surface . The abraded material can be copper , copper oxides or even other compounds of copper forming the surface film that is dislodged by the abrasive ...
Page 233
... surface charge decreases through adsorption of ions up to the point where all particles are neutral and inter - particle repulsion is reduced . For alumina in water , the isoelectric point , at which surface charge is zero , occurs at ...
... surface charge decreases through adsorption of ions up to the point where all particles are neutral and inter - particle repulsion is reduced . For alumina in water , the isoelectric point , at which surface charge is zero , occurs at ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch