Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 157
... technique is attractive since it is relatively broadband and can be used for measurements of thin materials in the 10-100 GHz band . Measurements on dielectric thin - film anisotropy are given in [ 37 ] . CAPACITANCE METHODS Capacitance ...
... technique is attractive since it is relatively broadband and can be used for measurements of thin materials in the 10-100 GHz band . Measurements on dielectric thin - film anisotropy are given in [ 37 ] . CAPACITANCE METHODS Capacitance ...
Page 239
... techniques . Although the FAST and RTCVD techniques cannot achieve full planarization , the LPD technique can achieve both global and local planarization because this technique has high capability for selective SiO2 film deposition ...
... techniques . Although the FAST and RTCVD techniques cannot achieve full planarization , the LPD technique can achieve both global and local planarization because this technique has high capability for selective SiO2 film deposition ...
Page 240
... technique are explained . The fluorinated SiO , film properties will also be compared with a non- fluorinated SiO2 film formed by atmospheric pressure chemical vapor deposition ( APCVD ) using tetraethoxysilane ( TEOS ) and ozone ( O3 ) ...
... technique are explained . The fluorinated SiO , film properties will also be compared with a non- fluorinated SiO2 film formed by atmospheric pressure chemical vapor deposition ( APCVD ) using tetraethoxysilane ( TEOS ) and ozone ( O3 ) ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch