Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 19
... temperatures and dynamic - mechanical analysis to ascertain the glass transition temperature and the mechanical modulus at temperatures in excess of the glass transition . INTRODUCTION Over the past several years we have been reporting ...
... temperatures and dynamic - mechanical analysis to ascertain the glass transition temperature and the mechanical modulus at temperatures in excess of the glass transition . INTRODUCTION Over the past several years we have been reporting ...
Page 124
... temperature is around 390 ° C . At higher temperatures , the decomposed material forms CH2C6H4CH2 . The mass spectrum shown in Figure 4 indicates fragments of CH2C6H4CH2 , C6H4CH2 and CH2C6H4CH2CH2 , which are characteristics of p ...
... temperature is around 390 ° C . At higher temperatures , the decomposed material forms CH2C6H4CH2 . The mass spectrum shown in Figure 4 indicates fragments of CH2C6H4CH2 , C6H4CH2 and CH2C6H4CH2CH2 , which are characteristics of p ...
Page 148
... temperatures . In addition , a decrease in the polystyrene film thickness with increasing temperature was observed for the case of very thin films ( i.e. 100 Å or less ) . Film contraction took place at temperatures less than the glass ...
... temperatures . In addition , a decrease in the polystyrene film thickness with increasing temperature was observed for the case of very thin films ( i.e. 100 Å or less ) . Film contraction took place at temperatures less than the glass ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch