Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
From inside the book
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Page 46
... an outstanding combination of physical, electrical, and chemical properties, the
thermal stability of these polymers is still a major concern for microelectronic
application. The reported thermal stability of Teflon AF (1600) is only 360 °C in air
.
... an outstanding combination of physical, electrical, and chemical properties, the
thermal stability of these polymers is still a major concern for microelectronic
application. The reported thermal stability of Teflon AF (1600) is only 360 °C in air
.
Page 178
As a result, the metallurgical interface between the plug and interconnecting line
is eliminated, inherently enhancing thermal stability. Elemental copper has better
or at least similar electromigration compared to aluminum-copper alloys in ...
As a result, the metallurgical interface between the plug and interconnecting line
is eliminated, inherently enhancing thermal stability. Elemental copper has better
or at least similar electromigration compared to aluminum-copper alloys in ...
Page 198
... and reliability requirements such as: (1) high mechanical strength, (2) good
dimensional stability, (3) high thermal stability, (4) ease of pattern and etch for
sub-micron features, (5) low moisture absorption and permeation, (6) good
adhesion, ...
... and reliability requirements such as: (1) high mechanical strength, (2) good
dimensional stability, (3) high thermal stability, (4) ease of pattern and etch for
sub-micron features, (5) low moisture absorption and permeation, (6) good
adhesion, ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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Common terms and phrases
absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers