Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 1
... thickness . A slight increase in tensile strength for thicknesses above 1/8 inch was noted , but decreases were found in the other tests . The normal compressive strength value was shown to be at a maximum between thicknesses of about 1 ...
... thickness . A slight increase in tensile strength for thicknesses above 1/8 inch was noted , but decreases were found in the other tests . The normal compressive strength value was shown to be at a maximum between thicknesses of about 1 ...
Page 3
... thickness tolerances require that the coatings be of uniform thickness within plus or minus 0.5 mils over the range of 1-8 mils . In the past , it has been difficult to quickly and accurately measure this plating thickness to the ...
... thickness tolerances require that the coatings be of uniform thickness within plus or minus 0.5 mils over the range of 1-8 mils . In the past , it has been difficult to quickly and accurately measure this plating thickness to the ...
Page 3
... Thickness The thickness of capacitor paper is often deter- mined by measuring an assembly of 10 sheets , using a gage of the parallel - plate type . The value thus obtained for the thickness is less than 10 times the value obtained by ...
... Thickness The thickness of capacitor paper is often deter- mined by measuring an assembly of 10 sheets , using a gage of the parallel - plate type . The value thus obtained for the thickness is less than 10 times the value obtained by ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch