Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 46
Because of this need, producing a thin film with all the demanded properties, we
have initiated research in two ... Chemical vapor deposition has been one of the
preferred processes for generating thin films of inorganic insulators in the ...
Because of this need, producing a thin film with all the demanded properties, we
have initiated research in two ... Chemical vapor deposition has been one of the
preferred processes for generating thin films of inorganic insulators in the ...
Page 46
Because of this need , producing a thin film with all the demanded properties , we
have initiated research in two ... Chemical vapor deposition has been one of the
preferred processes for generating thin films of inorganic insulators in the ...
Because of this need , producing a thin film with all the demanded properties , we
have initiated research in two ... Chemical vapor deposition has been one of the
preferred processes for generating thin films of inorganic insulators in the ...
Page 147
GLASS TRANSITION TEMPERATURE OF ULTRATHIN POLYMER FILMS ON
SILICON WEN - LI WU , WILLIAM E . WALLACE AND JOHN VAN ... T , of thin
films was determined by monitoring the film thickness as a function of
temperature .
GLASS TRANSITION TEMPERATURE OF ULTRATHIN POLYMER FILMS ON
SILICON WEN - LI WU , WILLIAM E . WALLACE AND JOHN VAN ... T , of thin
films was determined by monitoring the film thickness as a function of
temperature .
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers