Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 281
The absorbance peak of the methyl ( - CH3 ) group in argon plasma treated film
is much lower than that of the film cured in a furnace . The intensity of methyl ( -
CH3 ) group decreases with increasing treatment time from 10 min to 150 min .
The absorbance peak of the methyl ( - CH3 ) group in argon plasma treated film
is much lower than that of the film cured in a furnace . The intensity of methyl ( -
CH3 ) group decreases with increasing treatment time from 10 min to 150 min .
Page 282
With an increase of the treatment temperature , the refractive index decreases
slightly . The refractive index of as - coated SOG film is 1 . 42 , and it decreases to
1 . 39 after furnace - cured . And the shrinkage of the thickness by a furnace cure
...
With an increase of the treatment temperature , the refractive index decreases
slightly . The refractive index of as - coated SOG film is 1 . 42 , and it decreases to
1 . 39 after furnace - cured . And the shrinkage of the thickness by a furnace cure
...
Page 283
The breakdown strength of SOG film increases and leakage current decreases
with Ar plasma treatment time . As discussed previously in the FT - IR data , the
reduction of silanols ( Si - OH ) and of methyl ( - CH3 ) group in the bulk of SOG
film ...
The breakdown strength of SOG film increases and leakage current decreases
with Ar plasma treatment time . As discussed previously in the FT - IR data , the
reduction of silanols ( Si - OH ) and of methyl ( - CH3 ) group in the bulk of SOG
film ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers