Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 280
... treatment . The upper electrode was connected to 13.56 MHz radio frequency ( RF ) generator . RF power and gas pressure were kept at 80 W and 120 mTorr , respectively . The sample was set on the heated susceptor between 200 and 400 ° C ...
... treatment . The upper electrode was connected to 13.56 MHz radio frequency ( RF ) generator . RF power and gas pressure were kept at 80 W and 120 mTorr , respectively . The sample was set on the heated susceptor between 200 and 400 ° C ...
Page 281
... treated film is much lower than that of the film cured in a furnace . The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak ...
... treated film is much lower than that of the film cured in a furnace . The intensity of methyl ( -CH3 ) group decreases with increasing treatment time from 10 min to 150 min . With an increase of treatment time , the Si - O - Si peak ...
Page 283
... treatment time . As discussed previously in the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film occurs during argon plasma treatment , and thus the reconstructions of the loose ...
... treatment time . As discussed previously in the FT - IR data , the reduction of silanols ( Si - OH ) and of methyl ( -CH3 ) group in the bulk of SOG film occurs during argon plasma treatment , and thus the reconstructions of the loose ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch