Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 23
... values which are equivalent to that of silicon and stress values close to zero . Work is in progress to validate this hypothesis [ 9 ] . In contrast to these stress values , the other ILD candidate materials evaluated by the Austin ...
... values which are equivalent to that of silicon and stress values close to zero . Work is in progress to validate this hypothesis [ 9 ] . In contrast to these stress values , the other ILD candidate materials evaluated by the Austin ...
Page 256
... Values of the Cured SOGS All of the SOGs showed weak dispersion . We show the indices at 0.632μm . type of SOG ( a ) ( b ) ( c ) ( d ) refractive indices 1.365 1.364 1.382 1.368 thickness values 269nm 227nm 350nm 300nm The FT - IR ...
... Values of the Cured SOGS All of the SOGs showed weak dispersion . We show the indices at 0.632μm . type of SOG ( a ) ( b ) ( c ) ( d ) refractive indices 1.365 1.364 1.382 1.368 thickness values 269nm 227nm 350nm 300nm The FT - IR ...
Page 265
... values are always smaller is a result of the fact that the two techniques are probing different features . The flat region at the smallest q values ( largest features ) indicate that there is no porosity in the size range of ~ 20 to 200 ...
... values are always smaller is a result of the fact that the two techniques are probing different features . The flat region at the smallest q values ( largest features ) indicate that there is no porosity in the size range of ~ 20 to 200 ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch