Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
From inside the book
Results 1-3 of 55
Page 32
... wafer , the backside oxide of the wafer is removed in the 10 : 1 buffered HF solution and rinsed in deionized water for 3 min and then dried with nitrogen . Capacitance - Voltage measurements are performed using a HP - 4028A 1 MHz C - V ...
... wafer , the backside oxide of the wafer is removed in the 10 : 1 buffered HF solution and rinsed in deionized water for 3 min and then dried with nitrogen . Capacitance - Voltage measurements are performed using a HP - 4028A 1 MHz C - V ...
Page 118
... wafer ) or in RIP systems in which the lamps are at a higher temperature than the wafer . We have studied the role of photoeffects in RIP by comparing the film quality of furnace cured samples and samples cured with RIP using different ...
... wafer ) or in RIP systems in which the lamps are at a higher temperature than the wafer . We have studied the role of photoeffects in RIP by comparing the film quality of furnace cured samples and samples cured with RIP using different ...
Page 225
... WAFER 15 22 WAFER 23 24 Figure 8. Via chain resistances comparing ( a ) in - situ only bake ( No ex - situ Bake ) versus ex - situ bake wafer and control wafers . In this case the lack of an ex - situ bake caused blistering under M2 and ...
... WAFER 15 22 WAFER 23 24 Figure 8. Via chain resistances comparing ( a ) in - situ only bake ( No ex - situ Bake ) versus ex - situ bake wafer and control wafers . In this case the lack of an ex - situ bake caused blistering under M2 and ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
21 other sections not shown
Other editions - View all
Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch