Low-dielectric Constant MaterialsMaterials Research Society, 1995 - Electric insulators and insulation |
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Page 63
After depositing FLARET coatings on silicon wafers ( static dispense at 3 , 000
rpm followed by a 60 - second hot plate at 80°C ) ... Ten to thirteen
measurements were taken on each wafer within one square centimeter , and
these values were ...
After depositing FLARET coatings on silicon wafers ( static dispense at 3 , 000
rpm followed by a 60 - second hot plate at 80°C ) ... Ten to thirteen
measurements were taken on each wafer within one square centimeter , and
these values were ...
Page 166
Metal surfaces in UV light , in general , exclude reflective light and appear much
darker than the resin . This allows defects to be easily seen in UV light on DVS -
bisBCB films on silicon wafers and in multichip modules ( MCM ) . The structure ...
Metal surfaces in UV light , in general , exclude reflective light and appear much
darker than the resin . This allows defects to be easily seen in UV light on DVS -
bisBCB films on silicon wafers and in multichip modules ( MCM ) . The structure ...
Page 167
Wafers were held and visually inspected at arms length under a mercury lamp at
254 and 365 nm to find defective wafers . Optical images of selected wafers were
taken and recorded using the previously described imaging system using a 39x ...
Wafers were held and visually inspected at arms length under a mercury lamp at
254 and 365 nm to find defective wafers . Optical images of selected wafers were
taken and recorded using the previously described imaging system using a 39x ...
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Contents
VMethods and Needs for Low K Material Research | 5 |
Investigations of the Low Dielectric Constant Fluorinated | 29 |
Vapor Deposition of Very Low K Polymer Films | 45 |
Copyright | |
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absorption addition adhesion aerogels alternating annealing applications bond bulk capacitance chemical circuit coating coefficient compared copolyimide copolymer copper cured decrease defects density deposition determined device dielectric properties effect electrical electronic energy etch field Figure film thickness fluorinated frequency function glass higher IEEE imaging improve in-plane increase indicate initial integrated interconnect interlayer dielectric layer light loss low dielectric constant lower materials measurements mechanical metal method microelectronic Microwave modulus moisture monomers observed obtained optical organic oxide Parylene patterns performance permittivity planarization plasma polishing polyimide film polymer polymeric prepared properties range reduce reported requirements resistance resonators sample shown in Figure shows silica silicon SiO2 SOG film solution stress structure studied substrate surface Table technique Technology Teflon temperature thermal thermal expansion thermal stability thickness thin films values vapor various Volume wafers