Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 55
... wafers or aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this approach ...
... wafers or aluminum coated wafers , very poor coatings resulted . This problem was resolved by incorporating a small amount of a linear poly ( m - indane ) ( Mw = 19,170 g / mol ) into the spin coating solution . Using this approach ...
Page 63
... wafers ( static dispense at 3,000 rpm followed by a 60 - second hot plate at 80 ° C ) and curing them at 400 ° C under nitrogen for 1 hour , the coating thicknesses were determined . Ten to thirteen measurements were taken on each wafer ...
... wafers ( static dispense at 3,000 rpm followed by a 60 - second hot plate at 80 ° C ) and curing them at 400 ° C under nitrogen for 1 hour , the coating thicknesses were determined . Ten to thirteen measurements were taken on each wafer ...
Page 225
... wafer and control wafers . In this case the lack of an ex - situ bake caused blistering under M2 and higher and more variable via resistance than for control or ex - situ bake wafers . An RF etch effect is also shown in 7b where higher ...
... wafer and control wafers . In this case the lack of an ex - situ bake caused blistering under M2 and higher and more variable via resistance than for control or ex - situ bake wafers . An RF etch effect is also shown in 7b where higher ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch