Low-dielectric Constant Materials-synthesis and Applications in Microelectronics: Symposium Held April 17-19, 1995, San Francisco, California, U.S.A.Toh-Ming Lu |
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Page 105
... wiring signal propagation delay ( wiring delay ) . As integration level increases , the gate delay decreases because the gate length becomes shorter , whereas the wiring delay increases because it depends heavily on capacitance between ...
... wiring signal propagation delay ( wiring delay ) . As integration level increases , the gate delay decreases because the gate length becomes shorter , whereas the wiring delay increases because it depends heavily on capacitance between ...
Page 240
... wiring patterns . Next , the deposition conditions were changed to improve gap fill property . Fluorotrinormalpropoxysilane [ FSi ( n - OC3H7 ) 3 , FTNPS ] was also used as gas sources . The flow rates of N2 gas through FTAS group and ...
... wiring patterns . Next , the deposition conditions were changed to improve gap fill property . Fluorotrinormalpropoxysilane [ FSi ( n - OC3H7 ) 3 , FTNPS ] was also used as gas sources . The flow rates of N2 gas through FTAS group and ...
Page 242
... wiring patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is ...
... wiring patterns , respectively , as compared to ( d ) the TEOS / O , SiO2 film . The RTCVD - SiOF film is conformably deposited on the substrate surface with Al wiring patterns , as shown in Fig . 1 ( a ) . The LPD - SiO2 film is ...
Contents
Methods | 3 |
Low Dielectric Constant Thermosetting Resins | 111 |
Low Thermal Budget Processing of Organic Dielectrics | 117 |
Copyright | |
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Common terms and phrases
1995 Materials Research absorption annealing applications bond BPDA-PDA bulk c-BN capacitance chemical vapor deposition circuit coating copolymer copper cured density device dielectric film dielectric properties electrode electromigration etch rate FAST-SOG films film thickness films deposited fluorinated fluorinated polyimide frequency FTIR g/cm³ glass transition temperature h-BN helicon reactor IEEE Trans in-plane increase insulating integrated integrated circuits interlayer dielectric layer leakage current low dielectric constant lower LPD-SiO2 Materials Research Society measured mechanical properties metal microelectronics Microwave modulus moisture monomers multilevel interconnections optical organic polymers oxide Parylene patterns PECVD permittivity planarization plasma plasma treatment polish rate polyimide polyimide film polymeric materials pore Proc refractive index resin resistance resonators RTCVD-SiOF sample shown in Figure Si-O-Si silica aerogels siloxane SiO2 SiO2 film slurry SOG film spin-coated spin-on stress substrate surface Table technique Technology TEOS/O thermal stability thin films ULSI vapor deposition wet etch