Treatise on Materials Science and Technology, Volume 27

alloy analysis analyzing angle annealing aperture Appl atom-probe atomic layers Auger backscattering band Batson beam binding energy bonding Bragg angle bulk calculated channeling chemical shifts coefficients composition computed core core-level coverage cross section cross-section crystal curve defect depth detector determined device dislocation elastic Electron Microscopy elements emission energy loss epitaxial epoxy ESCA etching experimental grain boundaries incident intensity interdiffusion interface lattice imaging Lett materials measured metal method Murakami observed obtained optical orientation overlayer oxide parameters peak photoelectron photoemission photon Phys plane plasmon probe pulse region resolution scanning scattering Schematic semiconductor shown in Fig shows signal silicide silicon SiO2 soft X-ray solid specimen spectra spectrometer spectrum STEM strain strain tensor stresses structure studies substrate superlattice surface synchrotron radiation synchrotron radiation photoemission technique temperature tensor thermal thickness thin films Transmission Electron Microscopy valence valence band values wavelength width X-ray diffraction XTEM zone plate