## Treatise on Materials Science and Technology, Volume 27 |

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Page 213

The

approximate concentration profile, which is used to evaluate the absorption

integrals of Eq. 12e. By using these new

of xm which ...

The

**values**of x„ for all concentrations cm of the diffusion band define anapproximate concentration profile, which is used to evaluate the absorption

integrals of Eq. 12e. By using these new

**values**of n(xm), one obtains new**values**of xm which ...

Page 220

The determination of the D

out using the Fourier transformation method described in Section II.B.2. For these

samples, D

The determination of the D

**value**from these concentration profiles was carriedout using the Fourier transformation method described in Section II.B.2. For these

samples, D

**values**cannot be determined using the Boltzmann-Matano method, ...Page 240

Thus, the R

Using

plots of ln[(.R + l)(Is/Io)1/2 — R exp( — Z?2/)^)] versus t. The slope of the straight

...

Thus, the R

**value**for a given diffusion couple can be obtained from the intercept.Using

**values**of Dl and R, determined thus, a straight line is also expected in theplots of ln[(.R + l)(Is/Io)1/2 — R exp( — Z?2/)^)] versus t. The slope of the straight

...

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### Contents

Submicron Structure and Microanalysis | 3 |

VOLUME | 4 |

Synchronotron Radiation Photoemission Studies of Interfaces | 15 |

Copyright | |

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### Common terms and phrases

alloy analysis analyzing angle annealing aperture Appl atom-probe atomic layers Auger backscattering band Batson beam binding energy bonding Bragg angle bulk calculated channeling chemical shifts coefficients composition computed core core-level coverage cross section cross-section crystal curve defect depth detector determined device dislocation elastic Electron Microscopy elements emission energy loss epitaxial epoxy ESCA etching experimental grain boundaries incident intensity interdiffusion interface lattice imaging Lett materials measured metal method Murakami observed obtained optical orientation overlayer oxide parameters peak photoelectron photoemission photon Phys plane plasmon probe pulse region resolution scanning scattering Schematic semiconductor shown in Fig shows signal silicide silicon SiO2 soft X-ray solid specimen spectra spectrometer spectrum STEM strain strain tensor stresses structure studies substrate superlattice surface synchrotron radiation synchrotron radiation photoemission technique temperature tensor thermal thickness thin films Transmission Electron Microscopy valence valence band values wavelength width X-ray diffraction XTEM zone plate