Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 479
... films of Si have accounted for most of the work in this area , considerable success has also been realized in the deposition of II - VI and III - V compound films . A. Elemental Films 1. Carbon The deposition of amorphous carbon films ...
... films of Si have accounted for most of the work in this area , considerable success has also been realized in the deposition of II - VI and III - V compound films . A. Elemental Films 1. Carbon The deposition of amorphous carbon films ...
Page 542
... films with properties similar to those of TEOS - based chemistry [ 119 ] . This approach to film deposition offers interesting possi- bilities in terms of chemistry , film structure , and process control . V. PECVD OF AMORPHOUS AND ...
... films with properties similar to those of TEOS - based chemistry [ 119 ] . This approach to film deposition offers interesting possi- bilities in terms of chemistry , film structure , and process control . V. PECVD OF AMORPHOUS AND ...
Page 593
... deposited thin films [ 4 , 5 , 58 , 59 ] . The serial reactions for remote PECVD provide an opportunity to separately analyze , and thereby to control , each step of the deposition process sequence . This is difficult , if not ...
... deposited thin films [ 4 , 5 , 58 , 59 ] . The serial reactions for remote PECVD provide an opportunity to separately analyze , and thereby to control , each step of the deposition process sequence . This is difficult , if not ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength