Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 193
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
Page 398
... flow rates at a pressure of 78 torr and a susceptor temperature of 650 ° C . At low flow rates , the growth rate decreases in the flow direction because of the depletion of reactants . However , at high flow rates , the growth rate ...
... flow rates at a pressure of 78 torr and a susceptor temperature of 650 ° C . At low flow rates , the growth rate decreases in the flow direction because of the depletion of reactants . However , at high flow rates , the growth rate ...
Page 696
... flow rates are on the order of 5-200 sccm , with the upper limit usually determined by the maximum pumping speed and the desired work- ing pressure . Uniform etching requires that the flow rate be kept at a certain minimum level with ...
... flow rates are on the order of 5-200 sccm , with the upper limit usually determined by the maximum pumping speed and the desired work- ing pressure . Uniform etching requires that the flow rate be kept at a certain minimum level with ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength