Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Results 1-3 of 61
Page 435
... Crystal Growth 96 , 691 ( 1989 ) . 43. M. S. Kim , S. -K . Min , and J. S. Chun , J. Crystal Growth 74 , 21 ( 1986 ) . 44. ( a ) S. J. Hardwick , R. G. Lorentz , D. K. Weber , Solid State Technology 31 ( 10 ) , 93 ( 1988 ) . ( b ) ...
... Crystal Growth 96 , 691 ( 1989 ) . 43. M. S. Kim , S. -K . Min , and J. S. Chun , J. Crystal Growth 74 , 21 ( 1986 ) . 44. ( a ) S. J. Hardwick , R. G. Lorentz , D. K. Weber , Solid State Technology 31 ( 10 ) , 93 ( 1988 ) . ( b ) ...
Page 439
... Crystal Growth 94 , 929 ( 1989 ) . 158. D. I. Fotiadis , M. Boekholt , K. F. Jensen , and W. Richter , J. Crystal Growth 100 , 577 ( 1990a ) . 159. R. J. Field , J. Crystal Growth 97 , 739 ( 1989 ) . 160. A. B. Bulsari , M. E. Orazem ...
... Crystal Growth 94 , 929 ( 1989 ) . 158. D. I. Fotiadis , M. Boekholt , K. F. Jensen , and W. Richter , J. Crystal Growth 100 , 577 ( 1990a ) . 159. R. J. Field , J. Crystal Growth 97 , 739 ( 1989 ) . 160. A. B. Bulsari , M. E. Orazem ...
Page 441
... Crystal Growth 99 , 432 ( 1990 ) . 229. P. J. Wright and B. Cockayne , J. Crystal Growth 59 , 148 ( 1982 ) . 230. D. W. Kisker , P. H. Fuosss , J. J. Krajewski , P. M. Amirtharaj , S. Nakahara , and J. Menendez , J. Crystal Growth 86 ...
... Crystal Growth 99 , 432 ( 1990 ) . 229. P. J. Wright and B. Cockayne , J. Crystal Growth 59 , 148 ( 1982 ) . 230. D. W. Kisker , P. H. Fuosss , J. J. Krajewski , P. M. Amirtharaj , S. Nakahara , and J. Menendez , J. Crystal Growth 86 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength