Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 822
... GaAs with 257 - nm light at 10 W / cm2 using acid / peroxide gives an etch rate for 1018 / cm3 n - GaAs that is 1.5 times higher than that for Cr - doped GaAs and 20 times higher than that for 1018 / cm3 p - GaAs [ 100 ] . With KOH ...
... GaAs with 257 - nm light at 10 W / cm2 using acid / peroxide gives an etch rate for 1018 / cm3 n - GaAs that is 1.5 times higher than that for Cr - doped GaAs and 20 times higher than that for 1018 / cm3 p - GaAs [ 100 ] . With KOH ...
Page 833
... GaAs GaAs 413 , 521 , 633 LPPC : 12 or Br2 in H2O ( 78 ) visible CDPC - PEC ( 118 ) n - GaAs visible CDPC - PEC : KOH ( 124 ) n - GaAs visible CDPC - PEC : NaOH + EDTA ( 117 ) n - GaAs 442 CDPC - PEC : KCl , Tiron ' ( 245 ) p - GaAs 633 ...
... GaAs GaAs 413 , 521 , 633 LPPC : 12 or Br2 in H2O ( 78 ) visible CDPC - PEC ( 118 ) n - GaAs visible CDPC - PEC : KOH ( 124 ) n - GaAs visible CDPC - PEC : NaOH + EDTA ( 117 ) n - GaAs 442 CDPC - PEC : KCl , Tiron ' ( 245 ) p - GaAs 633 ...
Page 841
... GaAs etches at a faster rate than crystalline GaAs [ 244 ] . Irradiation using power densities sufficient to produce ablation produces etching in the presence of reactive gases such as CF3Br and CH3Br that is 100 times faster than ...
... GaAs etches at a faster rate than crystalline GaAs [ 244 ] . Irradiation using power densities sufficient to produce ablation produces etching in the presence of reactive gases such as CF3Br and CH3Br that is 100 times faster than ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength