Thin Film Processes, Volume 2 |
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Page 174
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48 , 221 ( 1986 ) . 98 . T . Tatsumi , H . Hirayama , and N . Aizaki , Appl . Phys .
Lett . 50 , 1234 ( 1987 ) . 99 . E . de Fresart , S . S . Rhee , and K . L . Wang , Appl
...
Lett . 52 , 2239 ( 1988 ) . 97 . R . M . Ostrom and F . G . Allen , Appl . Phys . Lett .
48 , 221 ( 1986 ) . 98 . T . Tatsumi , H . Hirayama , and N . Aizaki , Appl . Phys .
Lett . 50 , 1234 ( 1987 ) . 99 . E . de Fresart , S . S . Rhee , and K . L . Wang , Appl
...
Page 497
Lett . 38 , 946 ( 1981 ) . 32 . J . Y . Tsao and D . J . Ehrlich , Appl . Phys . Lett . 45 ,
617 ( 1984 ) . 33 . W . L . Ahlgren , E . J . Smith , J ... Lett . 53 , 1314 ( 1988 ) . 35 .
K . K . Schuegraf , in “ Microelectronic Manufacturing and Testing , ” pp . 1 - 4 .
Lett . 38 , 946 ( 1981 ) . 32 . J . Y . Tsao and D . J . Ehrlich , Appl . Phys . Lett . 45 ,
617 ( 1984 ) . 33 . W . L . Ahlgren , E . J . Smith , J ... Lett . 53 , 1314 ( 1988 ) . 35 .
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Page 850
Lett . 46 , 1107 ( 1985 ) . 111 . G . Reksten , W . Holber , and R . M . Osgood , Jr . ,
in “ Laser Chemical Processing of Semiconductor Devices , Extended Abstracts ,
1984 Fall Meeting of the Materials Research Society ” ( F . A . Houle , T . F ...
Lett . 46 , 1107 ( 1985 ) . 111 . G . Reksten , W . Holber , and R . M . Osgood , Jr . ,
in “ Laser Chemical Processing of Semiconductor Devices , Extended Abstracts ,
1984 Fall Meeting of the Materials Research Society ” ( F . A . Houle , T . F ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer