Thin Film Processes, Volume 2 |
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PECVD Reactor Systems IV . PECVD of Dielectric Films V . PECVD of
Amorphous and Polycrystalline Silicon Films VI . PECVD of Epitaxial Films VII .
PECVD of Refractory Metals and Their Silicides VIII . PECVD of Diamond Films IX
. Summary ...
PECVD Reactor Systems IV . PECVD of Dielectric Films V . PECVD of
Amorphous and Polycrystalline Silicon Films VI . PECVD of Epitaxial Films VII .
PECVD of Refractory Metals and Their Silicides VIII . PECVD of Diamond Films IX
. Summary ...
Page 558
PECVD OF DIAMOND FILMS The high thermal conductivity , transparency ,
hardness , and hightemperature semiconductor properties of diamond make it an
attractive material for many possible applications . Consequently , the low -
pressure ...
PECVD OF DIAMOND FILMS The high thermal conductivity , transparency ,
hardness , and hightemperature semiconductor properties of diamond make it an
attractive material for many possible applications . Consequently , the low -
pressure ...
Page 566
611 611 V . Properties and Device Applications of Remote PECVD Thin Films A .
Properties B . Device Applications VI . Summary and Conclusions
Acknowledgments References 613 614 616 616 1 . INTRODUCTION The
formation of thin ...
611 611 V . Properties and Device Applications of Remote PECVD Thin Films A .
Properties B . Device Applications VI . Summary and Conclusions
Acknowledgments References 613 614 616 616 1 . INTRODUCTION The
formation of thin ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer