Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 331
... SEMICONDUCTORS A. Introduction Thin films of semiconductor materials are essential to the operation of microelectronic devices . For example , amorphous Si is used for solar cell fabrication , epitaxial Si is employed in bipolar ...
... SEMICONDUCTORS A. Introduction Thin films of semiconductor materials are essential to the operation of microelectronic devices . For example , amorphous Si is used for solar cell fabrication , epitaxial Si is employed in bipolar ...
Page 354
... Semiconductors , " Proc . 2nd Internatl . Conf . INFOS 81 , Germany ( M. Schulz and G. Pensl , eds . ) . Springer - Verlag , New York , 1981 . 32. P. H. Singer , Semiconductor International 12 ( 8 ) , 48 ( July 1989 ) . 33. G. Beuchet ...
... Semiconductors , " Proc . 2nd Internatl . Conf . INFOS 81 , Germany ( M. Schulz and G. Pensl , eds . ) . Springer - Verlag , New York , 1981 . 32. P. H. Singer , Semiconductor International 12 ( 8 ) , 48 ( July 1989 ) . 33. G. Beuchet ...
Page 371
... semiconductor devices . Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound semiconductors ...
... semiconductor devices . Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound semiconductors ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength