Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 318
... SiH4 + O2 Reactions The most widely used deposition reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] . Highly N2 - diluted SiH4 is mixed with O2 and passed over the ...
... SiH4 + O2 Reactions The most widely used deposition reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] . Highly N2 - diluted SiH4 is mixed with O2 and passed over the ...
Page 319
... SiH4 ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism ...
... SiH4 ratio of 1 : 1 [ 270 ] , and at 450 ° C at 1.45 : 1 ( p . 102 in Ref . 14 ) . Similar ratios have been reported for other types of LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism ...
Page 602
... SiH4 ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate . However , if charged particle injection was allowed , thereby activating the SiH4 ...
... SiH4 ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate . However , if charged particle injection was allowed , thereby activating the SiH4 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength