Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 320
... SiO2 films ; the reaction is SiH¿Cl1⁄2 + 2N2O → SiO2 + 2HCI + 2N2 . ( 4.4 ) Uniform films can be prepared at 900-915 ° C and 0.8 torr by using a N2O / SiH2Cl2 mole ratio of 10 : 1 . The deposition rate in a tubular LPCVD reactor is ...
... SiO2 films ; the reaction is SiH¿Cl1⁄2 + 2N2O → SiO2 + 2HCI + 2N2 . ( 4.4 ) Uniform films can be prepared at 900-915 ° C and 0.8 torr by using a N2O / SiH2Cl2 mole ratio of 10 : 1 . The deposition rate in a tubular LPCVD reactor is ...
Page 597
... SiO2 + 2H2 ; ( 4.2 ) and ( 2 ) for O2 > SiH4 , the dominant by - product is H2O , and a “ balanced " deposition reaction , also confirmed by MS studies , can be written as O2 * + SiH4 → SiO2 + 2H2O . ( 4.3 ) Finally , changes in the ...
... SiO2 + 2H2 ; ( 4.2 ) and ( 2 ) for O2 > SiH4 , the dominant by - product is H2O , and a “ balanced " deposition reaction , also confirmed by MS studies , can be written as O2 * + SiH4 → SiO2 + 2H2O . ( 4.3 ) Finally , changes in the ...
Page 768
... SiO2 on silicon . ( The CF4 is the gas that is introduced into the ion source , but electron bombardment in the discharge chamber results in considerable fragmentation for both neutrals and ions leaving the ion source ) . The SiO2 will ...
... SiO2 on silicon . ( The CF4 is the gas that is introduced into the ion source , but electron bombardment in the discharge chamber results in considerable fragmentation for both neutrals and ions leaving the ion source ) . The SiO2 will ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength