Thin Film Processes, Volume 2 |
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Page 320
SiH2Cl2 + N2 Reactions This is the most widely used inorganic high -
temperature reaction for LPCVD of SiO2 films ; the reaction is SiH2Cl2 + 2N20 —
SiO2 + 2HCl + 2N2 . ( 4 . 4 ) Uniform films can be prepared at 900 - 915°C and 0 .
8 torr by ...
SiH2Cl2 + N2 Reactions This is the most widely used inorganic high -
temperature reaction for LPCVD of SiO2 films ; the reaction is SiH2Cl2 + 2N20 —
SiO2 + 2HCl + 2N2 . ( 4 . 4 ) Uniform films can be prepared at 900 - 915°C and 0 .
8 torr by ...
Page 597
2 ) and ( 2 ) for O2 > SiHą , the dominant by - product is H2O , and a “ balanced ”
deposition reaction , also confirmed by MS studies , can be written as 02 * + SiHA
→ SiO2 + 2H20 . ( 4 . 3 ) Finally , changes in the relative concentrations of the ...
2 ) and ( 2 ) for O2 > SiHą , the dominant by - product is H2O , and a “ balanced ”
deposition reaction , also confirmed by MS studies , can be written as 02 * + SiHA
→ SiO2 + 2H20 . ( 4 . 3 ) Finally , changes in the relative concentrations of the ...
Page 768
One example is the use of CF4 and RIBE to etch a layer of SiO2 on silicon . ( The
CF4 is the gas that is introduced into the ion source , but electron bombardment
in the discharge chamber results in considerable fragmentation for both neutrals
...
One example is the use of CF4 and RIBE to etch a layer of SiO2 on silicon . ( The
CF4 is the gas that is introduced into the ion source , but electron bombardment
in the discharge chamber results in considerable fragmentation for both neutrals
...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |