Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 319
The rate of SiO2 deposition in APCVD reactors can range up to 1,400 nm/min [
268,273], although for most applications 200-500 nm/min is more desirable to
minimize intrinsic stress and enhance film thickness control. Similarly high rates
are ...
The rate of SiO2 deposition in APCVD reactors can range up to 1,400 nm/min [
268,273], although for most applications 200-500 nm/min is more desirable to
minimize intrinsic stress and enhance film thickness control. Similarly high rates
are ...
Page 320
SiH2Cl2 + N2 Reactions This is the most widely used inorganic high-temperature
reaction for LPCVD of SiO2 films; the reaction is SiH2Cl2 + 2N2O -* SiO2 + 2HC1
+ 2N2 . (4.4) Uniform films can be prepared at 900-915°C and 0.8 torr by using ...
SiH2Cl2 + N2 Reactions This is the most widely used inorganic high-temperature
reaction for LPCVD of SiO2 films; the reaction is SiH2Cl2 + 2N2O -* SiO2 + 2HC1
+ 2N2 . (4.4) Uniform films can be prepared at 900-915°C and 0.8 torr by using ...
Page 768
One example is the use of CF4 and RIBE to etch a layer of SiO2 on silicon. (The
CF4 is the gas that is introduced into the ion source, but electron bombardment in
the discharge chamber results in considerable fragmentation for both neutrals ...
One example is the use of CF4 and RIBE to etch a layer of SiO2 on silicon. (The
CF4 is the gas that is introduced into the ion source, but electron bombardment in
the discharge chamber results in considerable fragmentation for both neutrals ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, Werner Kern |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Electronic books Science / Physics Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin film devices Thin films |
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