Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 6
R. P. Ouellette, M. M. Barbier, and P. N. Cheremisinoff, "Low Temperature
Plasma Technology Applications," Electrotechnology Vol. 5. Ann Arbor Science
Publishers, Ann Arbor, Michigan, 1980. 7. G. Hass, M. H. Francombe, and J. L.
Vossen, ...
R. P. Ouellette, M. M. Barbier, and P. N. Cheremisinoff, "Low Temperature
Plasma Technology Applications," Electrotechnology Vol. 5. Ann Arbor Science
Publishers, Ann Arbor, Michigan, 1980. 7. G. Hass, M. H. Francombe, and J. L.
Vossen, ...
Page 355
C. W. Pearce, in "VLSI Technology" (S. M. Sze, ed.), Chapter 2. McGraw-Hill, New
York, 1983. 50. M. L. Hamond, Solid State Technology, 31(5), 163 and 31(6), 103
(1988). 51. B. J. Baliga (ed.), "Epitaxial Silicon Technology." Academic Press ...
C. W. Pearce, in "VLSI Technology" (S. M. Sze, ed.), Chapter 2. McGraw-Hill, New
York, 1983. 50. M. L. Hamond, Solid State Technology, 31(5), 163 and 31(6), 103
(1988). 51. B. J. Baliga (ed.), "Epitaxial Silicon Technology." Academic Press ...
Page 559
Ch. IV-1. Academic Press. New York, 1978. 2. B. Gorowitz, T. B. Gorczyca, and
R. J. Saia, Solid Slate Technology, 28(6), 197 (1985) 3. A. C. Adams, Solid State
Technology 26(4), 135 (1983). Also in "VLSI Technology" (S. Sze, ed.), Chapter 3
.
Ch. IV-1. Academic Press. New York, 1978. 2. B. Gorowitz, T. B. Gorczyca, and
R. J. Saia, Solid Slate Technology, 28(6), 197 (1985) 3. A. C. Adams, Solid State
Technology 26(4), 135 (1983). Also in "VLSI Technology" (S. Sze, ed.), Chapter 3
.
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength