Thin Film Processes, Volume 2 |
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Page 333
A similar mechanism could be partly responsible for an increase in the growth
rate of almost one order of magnitude by addition of O2 [ 372 ] and oxygen -
containing organic compounds ( 373 ) . However , the actual growth mechanism
is not ...
A similar mechanism could be partly responsible for an increase in the growth
rate of almost one order of magnitude by addition of O2 [ 372 ] and oxygen -
containing organic compounds ( 373 ) . However , the actual growth mechanism
is not ...
Page 544
The addition of dopant species to the CVD environment interferes with the
chemical reaction that forms the film . The addition of phosphine ( PH3 ) or arsine
( AsH3 ) , reactive gases that are used to dope the silicon n - type , results in
severe ...
The addition of dopant species to the CVD environment interferes with the
chemical reaction that forms the film . The addition of phosphine ( PH3 ) or arsine
( AsH3 ) , reactive gases that are used to dope the silicon n - type , results in
severe ...
Page 723
... it is coated with a proprietary organic material . In addition to the etching of Al ,
hexode systems are also used for single - crystal Si , SiO2 , SizN4 ,
phosphosilicate glass ( PSG ) in fluorinated plasmas , and poly - Si in chlorinated
plasmas .
... it is coated with a proprietary organic material . In addition to the etching of Al ,
hexode systems are also used for single - crystal Si , SiO2 , SizN4 ,
phosphosilicate glass ( PSG ) in fluorinated plasmas , and poly - Si in chlorinated
plasmas .
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer