Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 110
... alloy . The composition of the deposited film is controlled by adjusting the evaporation rate of the respective ... alloy deposition by the co - evaporation tech- nique are summarized in Table II . 2. Evaporation from a Single Source ...
... alloy . The composition of the deposited film is controlled by adjusting the evaporation rate of the respective ... alloy deposition by the co - evaporation tech- nique are summarized in Table II . 2. Evaporation from a Single Source ...
Page 263
... alloy composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
... alloy composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
Page 417
... alloy materials often follows the trends extended from the binary materials . The doping trends exhibited by ... alloy . Unusual trends in dopant behavior are often found in alloy systems and can be attributed to unintentional impurities ...
... alloy materials often follows the trends extended from the binary materials . The doping trends exhibited by ... alloy . Unusual trends in dopant behavior are often found in alloy systems and can be attributed to unintentional impurities ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength