Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 65
... ANODE - CATHODE VOLTAGE ( V ) Fig . 53. The discharge current as a function of discharge voltage in a Kaufman - type ion source . CATHODE ANODE HION BEAM B FIELD- Fig . 54. An axial magnetic field geometry for a Kaufman - type ion ...
... ANODE - CATHODE VOLTAGE ( V ) Fig . 53. The discharge current as a function of discharge voltage in a Kaufman - type ion source . CATHODE ANODE HION BEAM B FIELD- Fig . 54. An axial magnetic field geometry for a Kaufman - type ion ...
Page 66
John L. Vossen, Werner Kern. ANODES CATHODE + 100 || ION BEAM -POLE PIECES Fig . 55. A multipole anode design for a Kaufman - type ion source . These sources range from 3 cm up to 60 cm in diameter or length . field across the anode ...
John L. Vossen, Werner Kern. ANODES CATHODE + 100 || ION BEAM -POLE PIECES Fig . 55. A multipole anode design for a Kaufman - type ion source . These sources range from 3 cm up to 60 cm in diameter or length . field across the anode ...
Page 250
... anode facing the cathode . In the case of the discrete anode , the electrode is isolated from the vacuum chamber and connected directly to the positive side of the arc power supply . Use of an isolated anode has several benefits . The anode ...
... anode facing the cathode . In the case of the discrete anode , the electrode is isolated from the vacuum chamber and connected directly to the positive side of the arc power supply . Use of an isolated anode has several benefits . The anode ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength