Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 73
Page 57
Sputtered atoms are emitted from the bombarded surface with energies typically
in the range of 3 to 20 eV . The sputtered atoms can have gas - phase collisions
with background gas atoms and , as such , transfer some of their energy to the ...
Sputtered atoms are emitted from the bombarded surface with energies typically
in the range of 3 to 20 eV . The sputtered atoms can have gas - phase collisions
with background gas atoms and , as such , transfer some of their energy to the ...
Page 58
2 ) where y = EqY20 / 20fK , and E , is the average kinetic energy per sputtered
atom ( 7 eV for Cu ) , Y , is the sputter yield ... and thermal conductivity of the gas
atoms , plays the major role in determining the effective impedance of the plasma
.
2 ) where y = EqY20 / 20fK , and E , is the average kinetic energy per sputtered
atom ( 7 eV for Cu ) , Y , is the sputter yield ... and thermal conductivity of the gas
atoms , plays the major role in determining the effective impedance of the plasma
.
Page 409
All atoms on the ( 100 ) surface possess two back bonds to the substrate and
have the two remaining bonds free to attach to arriving atoms . The presence of
two back bonds is advantageous because the deposited atom is fixed in
orientation ...
All atoms on the ( 100 ) surface possess two back bonds to the substrate and
have the two remaining bonds free to attach to arriving atoms . The presence of
two back bonds is advantageous because the deposited atom is fixed in
orientation ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |