Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 67
... beam . The ion beam is in reality a plasma , with a potential near ground . Therefore , the ion is decelerated by this potential difference . The net ion energy is then equiva- lent to the positive bias on the discharge chamber . The ...
... beam . The ion beam is in reality a plasma , with a potential near ground . Therefore , the ion is decelerated by this potential difference . The net ion energy is then equiva- lent to the positive bias on the discharge chamber . The ...
Page 643
... beam applications . The lateral extent of these energy deposition mechanisms places limitations on the spatial resolution that can be obtained . We can estimate these limitations by analyzing the energy flow in a solid during particle - ...
... beam applications . The lateral extent of these energy deposition mechanisms places limitations on the spatial resolution that can be obtained . We can estimate these limitations by analyzing the energy flow in a solid during particle - ...
Page 771
... beam current , has , in the past , frequently resulted in ion source operation at higher - than - optimum ion ... beam current by the beam area ( πd2 / 4 ) at the ion optics . But the important current density will almost certainly be at ...
... beam current , has , in the past , frequently resulted in ion source operation at higher - than - optimum ion ... beam current by the beam area ( πd2 / 4 ) at the ion optics . But the important current density will almost certainly be at ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength