Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 22
... cathode . This is called the normal discharge . As the discharge is increased , by small increases in voltage , the coverage of the cathode increases . Eventually , the entire cathode surface is covered , and subsequent increases in ...
... cathode . This is called the normal discharge . As the discharge is increased , by small increases in voltage , the coverage of the cathode increases . Eventually , the entire cathode surface is covered , and subsequent increases in ...
Page 52
... cathode ) with a simple translation of the sample past the cathode ( Fig . 36 ) . The dimensions of the racetrack are not critical to the operation of the cathode , and devices have been made that are several meters long . Long - term ...
... cathode ) with a simple translation of the sample past the cathode ( Fig . 36 ) . The dimensions of the racetrack are not critical to the operation of the cathode , and devices have been made that are several meters long . Long - term ...
Page 70
... cathode electron source , shown with an insert within the tip for cooler operation . The keeper is a local anode often used to sustain the discharge . moderately energetic electrons for plasmas . As shown in Fig . 59 , the hollow cathode ...
... cathode electron source , shown with an insert within the tip for cooler operation . The keeper is a local anode often used to sustain the discharge . moderately energetic electrons for plasmas . As shown in Fig . 59 , the hollow cathode ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength