Thin Film Processes, Volume 2 |
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Page 86
A . Vacuum Chamber A simple bell jar can be used for laboratory experimental
work . ... More sophisticated systems have also been designed , involving
multiple loading / unloading chambers attached to the deposition chamber by
manifolds ...
A . Vacuum Chamber A simple bell jar can be used for laboratory experimental
work . ... More sophisticated systems have also been designed , involving
multiple loading / unloading chambers attached to the deposition chamber by
manifolds ...
Page 250
The anode in the discharge circuit can be either an isolated electrode or the
vacuum chamber itself . In the latter case , it is normal practice to ground both the
positive side of the arc power supply and the vacuum chamber and its internal ...
The anode in the discharge circuit can be either an isolated electrode or the
vacuum chamber itself . In the latter case , it is normal practice to ground both the
positive side of the arc power supply and the vacuum chamber and its internal ...
Page 587
The OES ports are on the sides of the chamber , and the MS ports on the bottom .
The chamber originally had a 2 . 5 - cm - bore deposition zone , and it has
recently been modified for a larger chamber diameter of about 15 cm to decrease
...
The OES ports are on the sides of the chamber , and the MS ports on the bottom .
The chamber originally had a 2 . 5 - cm - bore deposition zone , and it has
recently been modified for a larger chamber diameter of about 15 cm to decrease
...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer