Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 86
... chamber with an associated pumping system , evaporation sources , substrate holder fixture , provisions for substrate heating / biasing as well as for rate monitor / controllers , etc. Important features and considerations for design of ...
... chamber with an associated pumping system , evaporation sources , substrate holder fixture , provisions for substrate heating / biasing as well as for rate monitor / controllers , etc. Important features and considerations for design of ...
Page 250
... chamber itself . In the latter case , it is normal practice to ground both the positive side of the arc power supply and the vacuum chamber and its internal components . The internal chamber walls or shielding act as the anode facing ...
... chamber itself . In the latter case , it is normal practice to ground both the positive side of the arc power supply and the vacuum chamber and its internal components . The internal chamber walls or shielding act as the anode facing ...
Page 587
... chambers a sub- strate preparation or cleaning chamber ; an analysis chamber with AES , and electron diffraction - RHEED in 8a , and rear - view LEED in 8b ; and a deposition chamber with two downstream shower - head gas injectors con ...
... chambers a sub- strate preparation or cleaning chamber ; an analysis chamber with AES , and electron diffraction - RHEED in 8a , and rear - view LEED in 8b ; and a deposition chamber with two downstream shower - head gas injectors con ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength