Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 4
... chemical methods of film deposition . Chap- ter III.1 describes thermally induced chemical vapor deposition . It provides an update to a similar chapter in the first volume . Chapter III.2 and III.3 review two special subsets of ...
... chemical methods of film deposition . Chap- ter III.1 describes thermally induced chemical vapor deposition . It provides an update to a similar chapter in the first volume . Chapter III.2 and III.3 review two special subsets of ...
Page 353
... chemical reaction feasibility and kinetics gov- erning CVD processes - and our imaginations ! REFERENCES 1. W. Kern and V. S. Ban , in " Thin Film Processes ” ( J. L. Vossen and W. Kern , eds . ) , Ch . III . 2. Academic Press , New ...
... chemical reaction feasibility and kinetics gov- erning CVD processes - and our imaginations ! REFERENCES 1. W. Kern and V. S. Ban , in " Thin Film Processes ” ( J. L. Vossen and W. Kern , eds . ) , Ch . III . 2. Academic Press , New ...
Page 855
... Chemical Processes , Extended Abstracts , 1985 Fall Meeting of the Materials Research Society " ( R. J. von Gutfeld , J. E. Greene , and H. Schlossberg , eds . ) , p . 63. Materials Research Society , Pittsburgh , Pennsylvania , 1985 ...
... Chemical Processes , Extended Abstracts , 1985 Fall Meeting of the Materials Research Society " ( R. J. von Gutfeld , J. E. Greene , and H. Schlossberg , eds . ) , p . 63. Materials Research Society , Pittsburgh , Pennsylvania , 1985 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength